Power semiconductor module comprising module-internal load and auxiliary connection devices of low-inductance configuration

A power semiconductor module comprising internal load and auxiliary connection devices embodied as wire bonding connections. A substrate has a plurality of load and auxiliary potential areas, wherein a power switch is arranged on a first load potential area, said power switch being embodied as a plu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Spang Matthias, Faller Eduard, Reuβer Lars
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A power semiconductor module comprising internal load and auxiliary connection devices embodied as wire bonding connections. A substrate has a plurality of load and auxiliary potential areas, wherein a power switch is arranged on a first load potential area, said power switch being embodied as a plurality of controllable power subswitches arranged in series. The power subswitches have a load bonding connection consisting of a plurality of load bonding wires to a second load potential area, wherein a first bonding base is arranged on the second load potential area and an adjacent second bonding base of the respective load bonding wire is arranged on a contact area of the power subswitch.