Method for forming tungsten film having low resistivity, low roughness and high reflectivity

Top-down methods of increasing reflectivity of tungsten films to form films having high reflectivity, low resistivity and low roughness are provided. The methods involve bulk deposition of tungsten followed by a removing a top portion of the deposited tungsten. In particular embodiments, removing a...

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Bibliographische Detailangaben
Hauptverfasser:	Chandrashekar Anand, Humayun Raashina
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Top-down methods of increasing reflectivity of tungsten films to form films having high reflectivity, low resistivity and low roughness are provided. The methods involve bulk deposition of tungsten followed by a removing a top portion of the deposited tungsten. In particular embodiments, removing a top portion of the deposited tungsten involve exposing it to a fluorine-containing plasma. The methods produce low resistivity tungsten bulk layers having lower roughness and higher reflectivity. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. Applications include forming tungsten bit lines.