Method to protect MOL metallization from hardmask strip process

Method to protect MOL metallization from hardmask strip process

A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kamineni Vimal, Licausi Nicholas Vincent, Siddiqui Shariq, Wahl Jeremy Austin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact formation. A semiconductor structure can include a sacrificial material layer over a contact formation.