Semiconductor device and process
A metal first, via first process for forming interconnects within a metallization layer of a semiconductor device is provided. In an embodiment a conductive material is deposited and the conductive material is patterned into a conductive line and a via. A dielectric material is deposited over the co...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A metal first, via first process for forming interconnects within a metallization layer of a semiconductor device is provided. In an embodiment a conductive material is deposited and the conductive material is patterned into a conductive line and a via. A dielectric material is deposited over the conductive line and the via, and the dielectric material and the via are planarized. |
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