Semiconductor devices and methods of forming the same

According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are sequentially formed on a sidewall of the gate electrode. The substrate is etched to form a recess region. A compressive stress pattern is formed i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Shin Dongsuk, Lee Naein, Roh Donghyun, Lee Chulwoong, Park Pankwi
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are sequentially formed on a sidewall of the gate electrode. The substrate is etched to form a recess region. A compressive stress pattern is formed in the recess region. A protective spacer is formed on a sidewall of the third spacer. When the recess region is formed, a lower portion of the second spacer is removed to form a gap region between the first and third spacers. The protective spacer fills the gap region.