Self-aligned contacts for vertical field effect transistors
Semiconductor devices having vertical field effect transistors with self-aligned source and drain contacts are provided, as well as methods for fabricating vertical field effect transistors with self-aligned source and drain contacts.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | Semiconductor devices having vertical field effect transistors with self-aligned source and drain contacts are provided, as well as methods for fabricating vertical field effect transistors with self-aligned source and drain contacts. |
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