Composite polishing layer chemical mechanical polishing pad

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric ph...

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Bibliographische Detailangaben
Hauptverfasser:	Brugarolas Brufau Teresa, Kozhukh Julia, Qian Bainian
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INDUCTANCES MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MAGNETS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PERFORMING OPERATIONS PHYSICS POLISHING SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSFORMERS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses; wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.