Semiconductor device

A semiconductor device comprising: a first, a second and a third conductive layer; the second conductive layer being located between the first and third conductive layers; wherein respective regions of the first and second conductive layers form a first capacitor; and respective regions of the secon...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Stribley Paul Ronald
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device comprising: a first, a second and a third conductive layer; the second conductive layer being located between the first and third conductive layers; wherein respective regions of the first and second conductive layers form a first capacitor; and respective regions of the second and third conductive layers form a second capacitor.