Electronic device

A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line.