Vertically integrated semiconductor device and manufacturing method
A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer disposed over the first semiconducting layer; a third semiconducting layer disposed over the second semiconducting layer; and an electrical byp...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer disposed over the first semiconducting layer; a third semiconducting layer disposed over the second semiconducting layer; and an electrical bypass coupled between the first semiconducting layer and the second semiconducting layer. |
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