Wordline decoder circuits for embedded charge trap multi-time-programmable-read-only-memory

Wordline decoder circuits for an embedded Multi-Time-Read-Only-Memory that includes a plurality of NMOS memory cells coupled to a plurality of wordlines in each row. The wordline decoder circuits control the charge trap behavior of the target NMOS memory array by the mode-dependent wordline high vol...

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Bibliographische Detailangaben
Hauptverfasser:	Leu Derek H, Kirihata Toshiaki, Yin Ming
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ONOTHER TECHNOLOGY AREAS INFORMATION STORAGE PHYSICS PULSE TECHNIQUE REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION STATIC STORES SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORKOPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FORIMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION,DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	Wordline decoder circuits for an embedded Multi-Time-Read-Only-Memory that includes a plurality of NMOS memory cells coupled to a plurality of wordlines in each row. The wordline decoder circuits control the charge trap behavior of the target NMOS memory array by the mode-dependent wordline high voltage (VWLH) and wordline low voltage (VWLL) trapping the charge in a programming mode by applying an elevated wordline voltage (EWLH) to one of the plurality of WLs, while de-trapping the charge in a reset mode by applying a negative wordline voltage (NWLL) to the entire array. The mode dependent voltage control is realized by switching to couple EWLH to VWLH in a programming mode, otherwise VDD to VWLH, while coupling NWLL to VWLL in a reset mode, otherwise, GND to VWLL. The switch includes plural gated diodes from VWLH with the wordline high protection voltage of VWLH_PR generated by lowering VWLH determined by gated diodes times threshold voltage. The switch includes a series of gated diodes from VWLL with a wordline low protection voltage of VWLL_PR generated by raising VWLL determined by the gated diodes by the threshold voltage, resulting in controlling the WL swing using thin-oxide devices.