Semiconductor device and method of manufacturing the same

A semiconductor device includes: a first member including a selection transistor on a front surface side of a first substrate; and a second member including a resistance change device and a connection layer that comes in contact with the resistance change device, the connection layer being bonded to...

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Bibliographische Detailangaben
Hauptverfasser: Fujiwara Ichiro, Shoji Mitsuharu
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes: a first member including a selection transistor on a front surface side of a first substrate; and a second member including a resistance change device and a connection layer that comes in contact with the resistance change device, the connection layer being bonded to a back surface of the first member.