Non-volatile memory cell

A non-volatile memory cell includes a tunneling part; a coupling device; a read transistor; a first select transistor connected to the read transistor forming a read path with the read transistor in a read mode; an erase tunneling structure forming a tunneling ejection path in an erase mode; and a p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lu Hsiao-Hua, Chang Chih-Lung, Kuo Chih-Ming
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A non-volatile memory cell includes a tunneling part; a coupling device; a read transistor; a first select transistor connected to the read transistor forming a read path with the read transistor in a read mode; an erase tunneling structure forming a tunneling ejection path in an erase mode; and a program tunneling structure forming a tunneling injection path in an program mode; wherein the read path is different from the tunneling ejection path and the tunneling injection path.