Feedback of layer thickness timing and clearance timing for polishing control

During polishing of a first substrate at a first polishing station, a sequence of measurements by a first in-situ monitoring system is monitored to determining a first time at which the first sequence exhibits a first predefined feature indicating a predetermined thickness of an overlying layer, and...

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Bibliographische Detailangaben
Hauptverfasser:	Benvegnu Dominic J, Wang Yuchun, Xu Kun, Swedek Boguslaw A, Liu Feng, Tu Wen-Chiang, Karuppiah Laksh
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INORGANIC CHEMISTRY MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PERFORMING OPERATIONS PHYSICS POLISHING SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	During polishing of a first substrate at a first polishing station, a sequence of measurements by a first in-situ monitoring system is monitored to determining a first time at which the first sequence exhibits a first predefined feature indicating a predetermined thickness of an overlying layer, and during polishing of the first substrate at a second polishing station, a sequence of measurements by a second in-situ monitoring system is monitored to determine a second time indicating clearance of the overlying layer and exposure of the underlying layer. The first time is used to calculate a first adjusted polishing pressure for a second substrate at the first polishing station, and the second time is used to calculate a second adjusted polishing pressure for the second substrate at the second polishing station.