Selective sputtering for pattern transfer

Methods of patterning conductive layer with a mask are described. The methods include low-ion-mass sputtering of the conductive layer by accelerating (e.g. helium or hydrogen containing ions) toward a substrate which includes the patterned mask and the underlying conductive layer. The sputtering pro...

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Bibliographische Detailangaben
Hauptverfasser: Joseph Eric, Hoinkis Mark, Miyazoe Hiroyuki
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Methods of patterning conductive layer with a mask are described. The methods include low-ion-mass sputtering of the conductive layer by accelerating (e.g. helium or hydrogen containing ions) toward a substrate which includes the patterned mask and the underlying conductive layer. The sputtering processes described herein selectively remove conductive layers while retaining mask material.