Word line hook up with protected air gap

A method of forming a semiconductor device includes forming a plurality of word lines separated by air gaps with contact pad structures connected to the word lines, and forming a dummy structure directly opposite an air gap between neighboring word lines. Subsequently, the contact pad structures are...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Takahashi Yuji, Shimoda Atsushi, Fukai Masayuki
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of forming a semiconductor device includes forming a plurality of word lines separated by air gaps with contact pad structures connected to the word lines, and forming a dummy structure directly opposite an air gap between neighboring word lines. Subsequently, the contact pad structures are cut into individual contact pads by a contact pad cut that intersects the dummy structure.