Sealed-sidewall device die, and manufacturing method thereof

A method for fabricating a sealed-sidewall device die may include filling grooves of a deeply-grooved device wafer with a sealant, yielding a sealed grooved device wafer. The method may also include forming grooves in a device wafer to yield the deeply-grooved device wafer. The step of forming groov...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yin Qian, Zhang Ming, Tai Dyson Hsinchih
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for fabricating a sealed-sidewall device die may include filling grooves of a deeply-grooved device wafer with a sealant, yielding a sealed grooved device wafer. The method may also include forming grooves in a device wafer to yield the deeply-grooved device wafer. The step of forming grooves may include forming a groove that at least partially penetrates each layer of the device wafer. The method may further include masking each device of the deeply-grooved device wafer. A sealed-sidewall device die may include at least one layer including a device substrate layer, a sidewall including a respective surface of each layer of the at least one layer, a sidewall sealant covering the sidewall, and a device formed on the device substrate layer. The sidewall sealant optionally does not cover a top surface of the device. The top surface of the device may directly adjoin an ambient medium thereabove.