Data-dependent self-biased differential sense amplifier

A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of th...

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Bibliographische Detailangaben
Hauptverfasser: Raghavan Ramesh, Rengarajan Krishnan S, Jayaraman Balaji, Kempanna Thejas, Tummuru Rajesh R, Kirihata Toshiaki
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of the memory cell couples a first circuit leg having a first current source load transistor and the second transistor couples a second circuit leg having a second current source load transistor. A programmed value is represented by a voltage threshold shift in one of the first or second transistors. A feedback circuit receives one of: a first signal or a second signal of the differential signals, and generates, in response, a feedback signal which is simultaneously applied to bias each current source load transistor in each the first and second circuit legs to amplify a voltage differential between the differential signal outputs.