Method of making a semiconductor device using multiple layer sets

A method of making a semiconductor device includes forming an intermediate semiconductor device. The intermediate device includes a substrate; and a dielectric layer over the substrate. The intermediate device includes a first layer set, including a silicon-rich photoresist material, over the dielectric layer. The intermediate device includes a second layer set, including a carbon-rich organic material layer, over the first layer set. The method further includes etching the second layer set to form a tapered opening in the second layer set. The method further includes etching the first layer set to form an opening in the first layer set, wherein etching the first layer set comprises removing the carbon-rich organic material layer. The method further includes etching the dielectric layer using the first layer set as a mask to form an opening in the dielectric layer, wherein etching the dielectric layer comprises reducing a thickness of the first layer set.