Thin film transistor substrate and the method thereof

A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line...

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Bibliographische Detailangaben
Hauptverfasser: Jeong Yu-Gwang, Song Jean-Ho, Suh Nam-Seok, Kim Sung-Ryul, Oh Hwa-Yeul, Kim Shi-Yul, Kim Jong-In, Kim Byeong-Beom, Hong Pil-Soon, Choung Jong-Hyun, Bae Yang-Ho, Kim Bong-Kyun, Yang Dong-Ju, Choi Shin-Il, Hong Sun-Young, Youn Jae-Hyoung, Seo O-Sung, Park Je-Hyeong, Lee Ki-Yeup
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.