Process for forming gate of thin film transistor devices

A process for forming a T-gate with enhanced mechanical strength and a reduced gate length for high electron mobility transistors is provided. The process includes the steps of forming a stem portion cavity with rounded top edges to enhance the mechanical strength, creating an insoluble diffused fea...

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Bibliographische Detailangaben
Hauptverfasser: Han Lu, Shih Yi-Chi, Qiu Cindy X, Shih Andy, Qiu Chunong, Yang Kuang-Yu, Qiu Julia, Shih Ishiang
Format: Patent
Sprache:eng
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Zusammenfassung:A process for forming a T-gate with enhanced mechanical strength and a reduced gate length for high electron mobility transistors is provided. The process includes the steps of forming a stem portion cavity with rounded top edges to enhance the mechanical strength, creating an insoluble diffused feature shrinking layer to reduce the gate length, carrying out a thermal flow process to further reduce the gate length, and forming a head portion cavity with negative side wall slopes to facilitate lift-off of gate metal layers.