Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures. |
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