Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

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Bibliographische Detailangaben
Hauptverfasser: Braithwaite Glyn, Langdo Thomas A, Cheng Zhiyuan, Lochtefeld Anthony J, Currie Matthew T, Fiorenza James
Format: Patent
Sprache:eng
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Zusammenfassung:Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.