Devices with thinned wafer

Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.

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Bibliographische Detailangaben
Hauptverfasser: Brockmeier Andre, Schreiber Kai-Alexander, Griessler Christian, Maier Katharina, Solazzi Francesco, Zorn Peter
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.