Integrated circuit with nanowire sensors comprising a shielding layer, sensing apparatus, measuring method and manufacturing method

Integrated circuit with nanowire sensors comprising a shielding layer, sensing apparatus, measuring method and manufacturing method

An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exp...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Alarcon-Rivero Manuel Eduardo, Mescher Marleen, Klootwijk Johan Hendrik, De Wild Nico Maris Adriaan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.