Single crystal production apparatus and single crystal production method having pedestal with grooves

A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is dispos...

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Bibliographische Detailangaben
Hauptverfasser:	Sonokawa Susumu, Takeyasu Shinobu, Iwasaki Atsushi
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.