Methods for wafer bonding, and for nucleating bonding nanophases

Methods for wafer bonding, and for nucleating bonding nanophases

Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bondi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Herbots Nichole, Bennett-Kennett Ross, Culbertson Robert, Murphy Ashlee, Hughes Brett, Acharya Ajjya, Watson Clarizza
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.