Temperature measuring method and plasma processing system

A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (Tmeas)...

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Bibliographische Detailangaben
Hauptverfasser:	Matsumoto Naoki, Yoshida Yusuke, Senda Takahiro, Son Ryou, Kohno Masayuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (Tmeas) according to a measurement window temperature (Tw), the function (f) being computed based on the correction target temperature (Tmeas) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (Tobj) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (Tw) corresponding to a temperature of the measurement window. The temperature measuring method further involves measuring the correction target temperature (Tmeas), measuring the measurement window temperature (Tw), and correcting the correction target temperature (Tmeas) according to the measurement window temperature (Tw) based on the obtained function (f).