Singulation through a masking structure surrounding expitaxial regions

Singulation through a masking structure surrounding expitaxial regions

In one embodiment, the semiconductor die includes a selective epitaxial layer including device regions, and a masking structure disposed around sidewalls of the epitaxial layer. The masking structure is part of an exposed surface of the semiconductor die.

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Bibliographische Detailangaben
Hauptverfasser: Kotek Manfred, Baumgartl Johannes, Engelhardt Manfred, Schulze Hans-Joachim
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In one embodiment, the semiconductor die includes a selective epitaxial layer including device regions, and a masking structure disposed around sidewalls of the epitaxial layer. The masking structure is part of an exposed surface of the semiconductor die.