Semiconductor device

There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a source region disposed apart from a drain region, a first body region surrounding the source region, a deep well region disposed below the drain region, and a second body region disp...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Moon Jinwoo, Sun I-Shan, Hebert Francois, Kim Youngju, Kim Kwangil, Oh Intaek, Kim Youngbae
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a source region disposed apart from a drain region, a first body region surrounding the source region, a deep well region disposed below the drain region, and a second body region disposed below the first body region. A bottom surface of the second body region is not coplanar with a bottom surface of the deep well region, and the first body region has a different conductivity type from the second body region.