Fast switching IGBT with embedded emitter shorting contacts and method for making same

Fast switching IGBT with embedded emitter shorting contacts and method for making same

Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed.

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Bibliographische Detailangaben
Hauptverfasser: PENDHARKAR SAMEER, KOREC JACEK, NEILSON JOHN MANNING SAVIDGE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed.