Fabrication of a deep trench memory cell

A method including forming a buffer layer between a top pad layer and a bottom pad layer all above a deep trench capacitor embedded in a substrate, forming a fin pattern, defined by one or more sidewall spacers, above the top pad layer using a sidewall image transfer technique, transferring the fin pattern into the top pad layer stopping of the buffer layer, and forming a fin in direct contact with a strap by transferring the fin pattern into the buffer layer, into the bottom pad layer, and into the substrate and an inner electrode of the deep trench capacitor, the fin is formed from a portion of the substrate and the strap is formed from a portion of the inner electrode of the deep trench capacitor.