Method of using sidewall image transfer process to form fin-shaped structures

Method of using sidewall image transfer process to form fin-shaped structures

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a plurality of mandrels on the first region and a plurality of patterns on the second region, in which the widths of the patterns on...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIOU ENIUAN, TUNG YUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a plurality of mandrels on the first region and a plurality of patterns on the second region, in which the widths of the patterns on the second region are greater than the widths of the mandrels on the first region; forming a hard mask on the second region to cover the patterns; and forming a cap layer on the first region and the second region to cover the mandrels and the hard mask.