Structure and method of integrating waveguides, photodetectors and logic devices

A method for monolithically integrating semiconductor waveguides, photodetectors and logic devices, i.e., field effect transistors, on a same substrate is provided. The method includes the use of a double semiconductor-on-insulator substrate that includes from bottom to top, a handle substrate, a fi...

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Hauptverfasser:	REZNICEK ALEXANDER, SCHAUB JEREMY D, LIU FEI, OUYANG CHRISTINE Q
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A method for monolithically integrating semiconductor waveguides, photodetectors and logic devices, i.e., field effect transistors, on a same substrate is provided. The method includes the use of a double semiconductor-on-insulator substrate that includes from bottom to top, a handle substrate, a first insulator layer, a first semiconductor material layer, a second insulator layer, and a second semiconductor material layer. The waveguides, photodetectors and logic devices can be formed in different regions of the substrate and are present atop a first insulator layer of the double semiconductor-on-insulator substrate.