Methods and systems for inspecting bonded wafers

A method of inspecting a bonded wafer 3 arrangement comprises: directing measuring radiation through the bonded wafer arrangement 3; imaging at least a portion of the bonded wafer arrangement onto a detector 19 using the measuring radiation having traversed the bonded wafer arrangement, wherein an object side numerical aperture δ of the imaging 16, 18 is less than 0.05; and simultaneously detecting, using the detector 19, at least a portion of the measuring radiation having traversed the bonded wafer arrangement at a multitude of different spaced apart locations 23 within the field of view; wherein the detected radiation has an intensity spectrum such that an intensity of the detected radiation having wavelengths less than 700 nm is less than 10% of a total intensity of the detected radiation and an intensity of the detected radiation having wavelengths greater than 1200 nm is less than 10% of the total intensity of the detected radiation.