High frequency write through memory device

Embodiments include a high frequency write through memory device including a plurality of memory cells and a plurality of local evaluation circuits. Each of the plurality of local evaluation circuits are coupled to at least one of the plurality of memory cells and are configured to prevent data stor...

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Bibliographische Detailangaben
Hauptverfasser: DAVIS JOHN D, VORA JIGAR J, CHAN YUEN H, BUNCE PAUL A, HENDERSON DIANA M
Format: Patent
Sprache:eng
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Zusammenfassung:Embodiments include a high frequency write through memory device including a plurality of memory cells and a plurality of local evaluation circuits. Each of the plurality of local evaluation circuits are coupled to at least one of the plurality of memory cells and are configured to prevent data stored in the coupled memory cells from being written to a latch node during a write through operation.