Adjusting the charge carrier lifetime in a bipolar semiconductor device

Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

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Bibliographische Detailangaben
Hauptverfasser:	SCHUSTEREDER WERNER, SCHMIDT GERHARD, MILLONIG HANS, HUMBEL OLIVER, BARUSIC MARIO, BAUER JOSEF GEORG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.