Method of fabricating deep trench semiconductor devices, and deep trench semiconductor devices

Present example embodiments relate generally to methods for fabricating semiconductor devices comprising forming an initial stack of alternating insulative and conductive layers over a substrate, identifying a plurality of bit line locations and word line locations for the initial stack, including a first bit line location and a first word line location, and forming, from the initial stack, a vertical arrangement of bit lines in the first bit line location, the vertical arrangement of bit lines having opposing sidewalls. The method further comprises forming a word line by forming a thin conductive layer over selected sections of the opposing sidewalls, the selected sections of the opposing sidewalls being sections within the first word line location. The forming the word line further comprises depositing conductive material adjacent to each thin conductive layer, the deposited conductive material in direct contact with the thin conductive layer.