Damascene metal-insulator-metal (MIM) device with improved scaleability

Damascene metal-insulator-metal (MIM) device with improved scaleability

A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the open...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHOO BRYAN, MARRIAN CHRISTIE, HADDAD SAMEER, RATHOR MANUJ, WANG FEI, AVANZINO STEVEN, SONG KEVIN, VANBUSKIRK MICHAEL, PANGRLE SUZETTE K, XIE JAMES, SHIELDS JEFFERY A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.