Resistive random access memory and method of resetting a resistive random access memory

Resistive random access memory and method of resetting a resistive random access memory

According to another embodiment, a method of a reset operation for a RRAM is provided. The method includes the following operations: providing a first voltage to the dielectric side electrode of the resistor; and providing a second voltage to a gate of the transistor, wherein the first voltage in a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUANG KUOING, TSAI CHUN-YANG, TING YU-WEI
Format: Patent
Sprache:eng
Schlagworte:
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PHYSICS
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Beschreibung
Zusammenfassung:According to another embodiment, a method of a reset operation for a RRAM is provided. The method includes the following operations: providing a first voltage to the dielectric side electrode of the resistor; and providing a second voltage to a gate of the transistor, wherein the first voltage in a second loop is lower than that in a first loop, and the second voltage in the second loop is higher than that in the first loop.