Charged particle beam apparatus

For inspection of a pattern such as a semiconductor device, it is useful to selectively detect a defect on the specific pattern in order to estimate the cause of the occurrence of the defect. An object of the invention is to provide a charged particle beam apparatus capable of setting, on the basis...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	FUKUNAGA FUMIHIKO, YAMAGUCHI KOHEI, HIRAI TAKEHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY IMAGE DATA PROCESSING OR GENERATION, IN GENERAL PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION
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Beschreibung
Zusammenfassung:	For inspection of a pattern such as a semiconductor device, it is useful to selectively detect a defect on the specific pattern in order to estimate the cause of the occurrence of the defect. An object of the invention is to provide a charged particle beam apparatus capable of setting, on the basis of the shape of the pattern on a sample, a region to be inspected. The invention is characterized in that the contour of the pattern on the sample is extracted using a template image obtained on the basis of an image of the sample, the region to be inspected is set on the basis of the contour of the pattern, a defect candidate is detected by comparing the image to be inspected with a comparative image, and the sample is inspected using a positional relationship between the region to be inspected and the defect candidate included in the region to be inspected.