Reading and writing to NAND flash memories using charge constrained codes
A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound...
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creator | BELLORADO JASON SUBRAMANIAN ARUNKUMAR LEE FREDERICK K. H TANG XIANGYU ZENG LINGQI |
description | A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9336885B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9336885B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9336885B13</originalsourceid><addsrcrecordid>eNrjZPAMSk1MycxLV0jMS1EoL8osAbFL8hX8HP1cFNJyEoszFHJTc_OLMlOLFUqLQZLJGYlF6akKyfl5xSVFiZl5qSlAdkpqMQ8Da1piTnEqL5TmZlBwcw1x9tBNLciPTy0uSExOzUstiQ8NtjQ2NrOwMHUyNCZCCQAm-jPw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Reading and writing to NAND flash memories using charge constrained codes</title><source>esp@cenet</source><creator>BELLORADO JASON ; SUBRAMANIAN ARUNKUMAR ; LEE FREDERICK K. H ; TANG XIANGYU ; ZENG LINGQI</creator><creatorcontrib>BELLORADO JASON ; SUBRAMANIAN ARUNKUMAR ; LEE FREDERICK K. H ; TANG XIANGYU ; ZENG LINGQI</creatorcontrib><description>A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160510&DB=EPODOC&CC=US&NR=9336885B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160510&DB=EPODOC&CC=US&NR=9336885B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BELLORADO JASON</creatorcontrib><creatorcontrib>SUBRAMANIAN ARUNKUMAR</creatorcontrib><creatorcontrib>LEE FREDERICK K. H</creatorcontrib><creatorcontrib>TANG XIANGYU</creatorcontrib><creatorcontrib>ZENG LINGQI</creatorcontrib><title>Reading and writing to NAND flash memories using charge constrained codes</title><description>A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAMSk1MycxLV0jMS1EoL8osAbFL8hX8HP1cFNJyEoszFHJTc_OLMlOLFUqLQZLJGYlF6akKyfl5xSVFiZl5qSlAdkpqMQ8Da1piTnEqL5TmZlBwcw1x9tBNLciPTy0uSExOzUstiQ8NtjQ2NrOwMHUyNCZCCQAm-jPw</recordid><startdate>20160510</startdate><enddate>20160510</enddate><creator>BELLORADO JASON</creator><creator>SUBRAMANIAN ARUNKUMAR</creator><creator>LEE FREDERICK K. H</creator><creator>TANG XIANGYU</creator><creator>ZENG LINGQI</creator><scope>EVB</scope></search><sort><creationdate>20160510</creationdate><title>Reading and writing to NAND flash memories using charge constrained codes</title><author>BELLORADO JASON ; SUBRAMANIAN ARUNKUMAR ; LEE FREDERICK K. H ; TANG XIANGYU ; ZENG LINGQI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9336885B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>BELLORADO JASON</creatorcontrib><creatorcontrib>SUBRAMANIAN ARUNKUMAR</creatorcontrib><creatorcontrib>LEE FREDERICK K. H</creatorcontrib><creatorcontrib>TANG XIANGYU</creatorcontrib><creatorcontrib>ZENG LINGQI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BELLORADO JASON</au><au>SUBRAMANIAN ARUNKUMAR</au><au>LEE FREDERICK K. H</au><au>TANG XIANGYU</au><au>ZENG LINGQI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reading and writing to NAND flash memories using charge constrained codes</title><date>2016-05-10</date><risdate>2016</risdate><abstract>A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | Reading and writing to NAND flash memories using charge constrained codes |
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