Electronic devices having semiconductor memory units having magnetic tunnel junction element

Disclosed are electronic devices comprising a semiconductor memory unit capable of reducing the switching current of a variable resistance element for switching between different resistance states. One implementation of a disclosed electronic device may include a first magnetic layer having an easy...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM GUKON, PARK KI-SEON
Format: Patent
Sprache:eng
Schlagworte:
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