Electronic devices having semiconductor memory units having magnetic tunnel junction element

Disclosed are electronic devices comprising a semiconductor memory unit capable of reducing the switching current of a variable resistance element for switching between different resistance states. One implementation of a disclosed electronic device may include a first magnetic layer having an easy magnetization axis in a first direction and having a variable magnetization direction, a third magnetic layer having a magnetization direction pinned in the first direction, a second magnetic layer interposed between the first magnetic layer and the third magnetic layer, and having a magnetization direction pinned in a second direction different from the first direction, a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, and a non-magnetic layer interposed between the second magnetic layer and the third magnetic layer.