Metal-insulator-metal capacitor structures

Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, and a third electrode for...

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Bibliographische Detailangaben
Hauptverfasser: KIM ROBERT WON CHOL, SRINIVAS VAISHNAV, JAKUSHOKAS RENATAS
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, and a third electrode formed from a third metal layer, wherein second and third electrodes are spaced farther apart than the first and second electrodes. The capacitor structure also comprises a first dielectric layer between the first and second electrodes, and a second dielectric layer between the second and third metal layers, wherein the second dielectric layer has a larger thickness than the first dielectric layer. The first electrode is coupled to a first power-supply rail, the third electrode is coupled to a second power-supply rail, and the second power-supply rail has a higher power-supply voltage than the first power-supply rail.