Semiconductor device and method of manufacturing the same
A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts. |
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