Semiconductor device with combined power and ground ring structure

Semiconductor device with combined power and ground ring structure

A semiconductor device includes a lead frame, and an integrated circuit die. The lead frame has a flag for supporting the die and leads that surround that flag and die. The lead frame also has ground ring that surrounds the flag and die. First bond wires electrically connect the die to the lead fram...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: IBRAHIM RUZAINI B, TIU KONG BEE, KOH WEN SHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a lead frame, and an integrated circuit die. The lead frame has a flag for supporting the die and leads that surround that flag and die. The lead frame also has ground ring that surrounds the flag and die. First bond wires electrically connect the die to the lead frame leads. An insulating layer is disposed on the ground ring, and a power layer is disposed on the insulating layer. The semiconductor device further includes second bond wires that connect the die to the ground ring and third bond wires that connect the die to the power layer.