Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer

An apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer are provided. The apparatus comprises a multi-wavelength light source, a semiconductor wafer holder for holding a semiconductor wafer, a head for directing th...

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1. Verfasser:	SCHÖNLEBER MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	An apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer are provided. The apparatus comprises a multi-wavelength light source, a semiconductor wafer holder for holding a semiconductor wafer, a head for directing the light source onto the semiconductor wafer, a spectrometer for collecting light comprising multiple wavelengths reflected from the semiconductor wafer and analysis means for determining a depth of the region from an interference pattern of light reflected from the semiconductor wafer by performing Fourier domain optical coherence tomography.