FinFET devices

Disclosed are various embodiments of FinFET semiconductor devices. A pair of matched capacitors can be formed that share a common source, drain and/or channel. Accordingly, the capacitance characteristics of each capacitor can be manufactured such that they are similar to one another. A resistor man...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: XIA WEI, CHEN XIANGDONG, CHEN HENRY, WOO AGNES
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Disclosed are various embodiments of FinFET semiconductor devices. A pair of matched capacitors can be formed that share a common source, drain and/or channel. Accordingly, the capacitance characteristics of each capacitor can be manufactured such that they are similar to one another. A resistor manufactured by employing FinFET techniques is also described. The resistor can be manufactured with an effective length that is greater than a distance traversed along a substrate by the resistor.