Pattern forming method

According to one embodiment, a pattern forming method includes forming a graphoepitaxy on a substrate, a process of forming a first self-assembly material layer that contains a first segment and a second segment in a depressed portion of the graphoepitaxy, a process of forming a first self-assembly...

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Bibliographische Detailangaben
1. Verfasser:	KAWANISHI AYAKO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS SPECIALLY ADAPTED THEREFOR APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY MICROSTRUCTURAL TECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	According to one embodiment, a pattern forming method includes forming a graphoepitaxy on a substrate, a process of forming a first self-assembly material layer that contains a first segment and a second segment in a depressed portion of the graphoepitaxy, a process of forming a first self-assembly pattern that has a first region containing the first segment, and a second region containing the second segment by performing a phase separation of the first self-assembly material layer, a process of forming a second self-assembly material layer containing a third segment and a fourth segment on a projected portion of the graphoepitaxy, and the first self-assembly pattern, a process of forming a second self-assembly pattern that has a third region containing the third segment, and a fourth region containing the fourth segment by performing a phase separation of the second self-assembly material layer.