High accuracy design based classification

Systems and methods for classifying defects on a wafer are provided. One method includes dilating an extended bounding box (EBB) surrounding a defect position on a wafer in two dimensions in proportion to a width and height of a pattern of interest (POI) for a hot spot closest to the defect position. The method also includes determining if polygons in the POI match polygons in the dilated bounding box. If the polygons in the POI do not match the polygons in the dilated bounding box, the defect is classified as a non-hot spot defect. If the polygons in the POI match the polygons in the dilated bounding box, the defect is classified as a hot spot defect if the area of the EBB intersects the area of interest associated with the hot spot and a non-hot spot defect if the EBB area does not intersect the area of interest.